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MSCSM170AM029CT6LIAG Microchip Technology
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Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 2987.07 EUR |
100+ | 2218.97 EUR |
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Technische Details MSCSM170AM029CT6LIAG Microchip Technology
Description: SIC 2N-CH 1700V 676A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 3kW (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 676A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 1000V, Rds On (Max) @ Id, Vgs: 3.75mOhm @ 360A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2136nC @ 20V, Vgs(th) (Max) @ Id: 3.3V @ 30mA.
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MSCSM170AM029CT6LIAG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3kW (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 676A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 1000V Rds On (Max) @ Id, Vgs: 3.75mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2136nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 30mA |
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