MSCSM120HM083AG Microchip Technology
![MSCSM120HM083AG-SiC-MOSFET-module-DS00004648.pdf](/images/adobe-acrobat.png)
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details MSCSM120HM083AG Microchip Technology
Description: PM-MOSFET-SIC-SP6C, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.042kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 251A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 9mA, Part Status: Active.
Weitere Produktangebote MSCSM120HM083AG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
MSCSM120HM083AG | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |