MSCSM120AM02T6LIAG Microchip Technology
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Technische Details MSCSM120AM02T6LIAG Microchip Technology
Description: PM-MOSFET-SIC-SP6L1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 3.75kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 947A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 36mA, Part Status: Active.
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MSCSM120AM02T6LIAG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 36mA Part Status: Active |
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