![MSCDC200KK120D1PAG MSCDC200KK120D1PAG](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2934/MSCDC300A70AG-VIEW-A.jpg)
MSCDC200KK120D1PAG Microchip Technology
![1244378-mscdc200kk120d1pag-datasheet](/images/adobe-acrobat.png)
Description: DIODE MOD SIC SCHOT 1200V D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A
Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 396.93 EUR |
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Technische Details MSCDC200KK120D1PAG Microchip Technology
Description: DIODE MOD SIC SCHOT 1200V D1P, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: D1P, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A, Current - Reverse Leakage @ Vr: 800 µA @ 1200 V.
Weitere Produktangebote MSCDC200KK120D1PAG nach Preis ab 302.6 EUR bis 399.85 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MSCDC200KK120D1PAG | Hersteller : Microchip Technology |
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auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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MSCDC200KK120D1PAG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: diode; double,common cathode; 1.2kV; 200A; D1P; screw; SiC Semiconductor structure: common cathode; double Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Case: D1P Max. off-state voltage: 1.2kV Load current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSCDC200KK120D1PAG | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: diode; double,common cathode; 1.2kV; 200A; D1P; screw; SiC Semiconductor structure: common cathode; double Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Technology: SiC Case: D1P Max. off-state voltage: 1.2kV Load current: 200A |
Produkt ist nicht verfügbar |