Technische Details MS1006 MICROSEMI
Description: RF TRANS NPN 55V 30MHZ M135, Packaging: Bulk, Package / Case: M135, Mounting Type: Stud Mount, Transistor Type: NPN, Operating Temperature: 200°C, Gain: 14dB, Power - Max: 127W, Current - Collector (Ic) (Max): 3.25A, Voltage - Collector Emitter Breakdown (Max): 55V, DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V, Frequency - Transition: 30MHz, Supplier Device Package: M135, Part Status: Obsolete.
Weitere Produktangebote MS1006
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MS1006 | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 55V 30MHZ M135 Packaging: Bulk Package / Case: M135 Mounting Type: Stud Mount Transistor Type: NPN Operating Temperature: 200°C Gain: 14dB Power - Max: 127W Current - Collector (Ic) (Max): 3.25A Voltage - Collector Emitter Breakdown (Max): 55V DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V Frequency - Transition: 30MHz Supplier Device Package: M135 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| MS1006 | Hersteller : Microchip Technology | Microchip Technology |
Produkt ist nicht verfügbar |