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MPSW51G

MPSW51G onsemi

mpsw51-d.pdf Hersteller: onsemi
Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
auf Bestellung 13381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1665+0.3 EUR
Mindestbestellmenge: 1665
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Technische Details MPSW51G onsemi

Description: TRANS PNP 30V 1A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V, Frequency - Transition: 50MHz, Supplier Device Package: TO-92 (TO-226), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 1 W.

Weitere Produktangebote MPSW51G

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MPSW51G Hersteller : ONSEMI ONSM-S-A0013307613-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - MPSW51G - MPSW51G, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 13381 Stücke:
Lieferzeit 14-21 Tag (e)
MPSW51G MPSW51G Hersteller : ON Semiconductor 2219mpsw51-d.pdf Trans GP BJT PNP 30V 1A 1000mW 3-Pin TO-92 Box
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MPSW51G MPSW51G Hersteller : onsemi mpsw51-d.pdf Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPSW51G Hersteller : Infineon Technologies mpsw51-d.pdf Bipolar Transistors - BJT
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