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MMST5551Q-7-F

MMST5551Q-7-F Diodes Incorporated


DIODS21611_1-2541825.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Hi Voltage Transistor
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Technische Details MMST5551Q-7-F Diodes Incorporated

Description: TRANS NPN 160V 0.2A SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-323, Part Status: Active, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 200 mW.

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MMST5551Q-7-F MMST5551Q-7-F Hersteller : Diodes Inc 678ds30173.pdf Trans GP BJT NPN 160V 0.2A 200mW Automotive 3-Pin SOT-323 T/R
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MMST5551Q-7-F MMST5551Q-7-F Hersteller : Diodes Incorporated ds30173.pdf Description: TRANS NPN 160V 0.2A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 200 mW
Produkt ist nicht verfügbar