MMRF1312GSR5 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: TRANS 960-1215MHZ 1000W PEAK 50V
Packaging: Tape & Reel (TR)
Package / Case: NI-1230-4S GW
Mounting Type: Surface Mount
Frequency: 1.03GHz
Configuration: Dual
Power - Output: 1000W
Gain: 19.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4S GULL
Part Status: Active
Voltage - Rated: 112 V
Voltage - Test: 50 V
Current - Test: 100 mA
Description: TRANS 960-1215MHZ 1000W PEAK 50V
Packaging: Tape & Reel (TR)
Package / Case: NI-1230-4S GW
Mounting Type: Surface Mount
Frequency: 1.03GHz
Configuration: Dual
Power - Output: 1000W
Gain: 19.6dB
Technology: LDMOS
Supplier Device Package: NI-1230-4S GULL
Part Status: Active
Voltage - Rated: 112 V
Voltage - Test: 50 V
Current - Test: 100 mA
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Technische Details MMRF1312GSR5 NXP USA Inc.
Description: TRANS 960-1215MHZ 1000W PEAK 50V, Packaging: Tape & Reel (TR), Package / Case: NI-1230-4S GW, Mounting Type: Surface Mount, Frequency: 1.03GHz, Configuration: Dual, Power - Output: 1000W, Gain: 19.6dB, Technology: LDMOS, Supplier Device Package: NI-1230-4S GULL, Part Status: Active, Voltage - Rated: 112 V, Voltage - Test: 50 V, Current - Test: 100 mA.
Weitere Produktangebote MMRF1312GSR5
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
MMRF1312GSR5 | Hersteller : NXP Semiconductors | RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V |
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