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MMFTP5618 Diotec Semiconductor
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Description: MOSFET, SOT-23, -60V, -1.25A, 0,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V
auf Bestellung 2675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
36+ | 0.49 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.18 EUR |
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Technische Details MMFTP5618 Diotec Semiconductor
Description: MOSFET, SOT-23, -60V, -1.25A, 0,, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V.
Weitere Produktangebote MMFTP5618 nach Preis ab 0.24 EUR bis 0.65 EUR
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MMFTP5618 | Hersteller : Diotec Semiconductor |
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auf Bestellung 8141 Stücke: Lieferzeit 10-14 Tag (e) |
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MMFTP5618 | Hersteller : Diotec Semiconductor |
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MMFTP5618 | Hersteller : DIOTEC SEMICONDUCTOR |
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MMFTP5618 | Hersteller : Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V |
Produkt ist nicht verfügbar |