Technische Details MMFTP5618-AQ Diotec Semiconductor
Description: IC, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V, Qualification: AEC-Q101.
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MMFTP5618-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
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MMFTP5618-AQ | Hersteller : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MMFTP5618-AQ | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |