MMFTP3008AK DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -230mA; Idm: -1A; 420mW; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 0.55nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1A
Case: SOT23
Drain-source voltage: -30V
Drain current: -0.23A
On-state resistance: 6.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.42W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -230mA; Idm: -1A; 420mW; SOT23
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 0.55nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -1A
Case: SOT23
Drain-source voltage: -30V
Drain current: -0.23A
On-state resistance: 6.5Ω
Type of transistor: P-MOSFET
Power dissipation: 0.42W
Anzahl je Verpackung: 1 Stücke
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Technische Details MMFTP3008AK DIOTEC SEMICONDUCTOR
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -230mA; Idm: -1A; 420mW; SOT23, Mounting: SMD, Polarisation: unipolar, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Gate charge: 0.55nC, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: -1A, Case: SOT23, Drain-source voltage: -30V, Drain current: -0.23A, On-state resistance: 6.5Ω, Type of transistor: P-MOSFET, Power dissipation: 0.42W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MMFTP3008AK
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MMFTP3008AK | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -230mA; Idm: -1A; 420mW; SOT23 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 0.55nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -1A Case: SOT23 Drain-source voltage: -30V Drain current: -0.23A On-state resistance: 6.5Ω Type of transistor: P-MOSFET Power dissipation: 0.42W |
Produkt ist nicht verfügbar |