MMFTN620KD-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1A; 0.5W
Mounting: SMD
Case: SOT26; SOT457
Application: automotive industry
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1A
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Anzahl je Verpackung: 10 Stücke
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Technische Details MMFTN620KD-AQ DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 350mA, Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V, Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-26, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MMFTN620KD-AQ
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MMFTN620KD-AQ | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-26 Grade: Automotive Qualification: AEC-Q101 |
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MMFTN620KD-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1A; 0.5W Mounting: SMD Case: SOT26; SOT457 Application: automotive industry Kind of package: reel; tape Polarisation: unipolar Gate charge: 1.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1A Drain-source voltage: 60V Drain current: 0.35A On-state resistance: 2.25Ω Type of transistor: N-MOSFET Power dissipation: 0.5W |
Produkt ist nicht verfügbar |