MMFTN6190KDW Diotec Semiconductor
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Technische Details MMFTN6190KDW Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363, Mounting: SMD, Features of semiconductor devices: ESD protected gate, Case: SOT363, Power dissipation: 0.4W, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 2nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 9.6A, Drain-source voltage: 30V, Drain current: 1A, On-state resistance: 0.45Ω, Type of transistor: N-MOSFET x2, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote MMFTN6190KDW
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MMFTN6190KDW | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363 Mounting: SMD Features of semiconductor devices: ESD protected gate Case: SOT363 Power dissipation: 0.4W Kind of package: reel; tape Polarisation: unipolar Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 9.6A Drain-source voltage: 30V Drain current: 1A On-state resistance: 0.45Ω Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 5 Stücke |
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MMFTN6190KDW | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Rds On (Max) @ Id, Vgs: 280mOhm @ 1.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-363 |
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MMFTN6190KDW | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, SOT-363, 30V, 1A, 150C, N |
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MMFTN6190KDW | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 9.6A; 0.4W; SOT363 Mounting: SMD Features of semiconductor devices: ESD protected gate Case: SOT363 Power dissipation: 0.4W Kind of package: reel; tape Polarisation: unipolar Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 9.6A Drain-source voltage: 30V Drain current: 1A On-state resistance: 0.45Ω Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |