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MMFTN6001 DIOTEC SEMICONDUCTOR
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Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 440mA
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
On-state resistance: 2Ω
Gate-source voltage: ±20V
Pulsed drain current: 1A
Power dissipation: 530mW
Anzahl je Verpackung: 20 Stücke
auf Bestellung 24520 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1440+ | 0.05 EUR |
2660+ | 0.027 EUR |
3000+ | 0.024 EUR |
3640+ | 0.02 EUR |
3860+ | 0.019 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MMFTN6001 DIOTEC SEMICONDUCTOR
Description: MOSFET SOT23 N 60V 2OHM 150C, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 530mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V.
Weitere Produktangebote MMFTN6001 nach Preis ab 0.019 EUR bis 0.25 EUR
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MMFTN6001 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Drain current: 440mA Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET On-state resistance: 2Ω Gate-source voltage: ±20V Pulsed drain current: 1A Power dissipation: 530mW |
auf Bestellung 24520 Stücke: Lieferzeit 14-21 Tag (e) |
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MMFTN6001 | Hersteller : Diotec Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V |
auf Bestellung 2345 Stücke: Lieferzeit 10-14 Tag (e) |
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MMFTN6001 | Hersteller : Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V |
Produkt ist nicht verfügbar |
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MMFTN6001 | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |