MMFTN3422ASK DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23
Mounting: SMD
Drain-source voltage: 30V
Drain current: 4.2A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23
Mounting: SMD
Drain-source voltage: 30V
Drain current: 4.2A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 11.5nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Case: SOT23
Anzahl je Verpackung: 1 Stücke
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Technische Details MMFTN3422ASK DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V.
Weitere Produktangebote MMFTN3422ASK
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MMFTN3422ASK | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V |
Produkt ist nicht verfügbar |
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MMFTN3422ASK | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23 Mounting: SMD Drain-source voltage: 30V Drain current: 4.2A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 11.5nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Case: SOT23 |
Produkt ist nicht verfügbar |