Technische Details MMFTN138K Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 350mW; SOT23, Case: SOT23, Mounting: SMD, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Gate charge: 1.3nC, Gate-source voltage: ±20V, Pulsed drain current: 1.2A, Kind of channel: enhanced, Drain-source voltage: 60V, Drain current: 0.36A, On-state resistance: 6.5Ω, Type of transistor: N-MOSFET, Power dissipation: 0.35W, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MMFTN138K
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MMFTN138K | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 350mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.3nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 60V Drain current: 0.36A On-state resistance: 6.5Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MMFTN138K | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 350mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.3nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 60V Drain current: 0.36A On-state resistance: 6.5Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar |
Produkt ist nicht verfügbar |