MMBT7002KDW-AQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET SOT363 N+N 60V 3OHM 150C
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 295mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.75V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.079 EUR |
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Technische Details MMBT7002KDW-AQ Diotec Semiconductor
Description: MOSFET SOT363 N+N 60V 3OHM 150C, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 295mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 300mA, Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V, Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.75V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MMBT7002KDW-AQ nach Preis ab 0.07 EUR bis 0.48 EUR
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MMBT7002KDW-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, SOT-363, 60V, 0.3A, 150C, N, AEC-Q101 |
auf Bestellung 5885 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT7002KDW-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET SOT363 N+N 60V 3OHM 150C Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 295mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300mA Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.75V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT7002KDW-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 300mA; Idm: 1.2A; 0.35W Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: ESD protected gate Drain current: 0.3A On-state resistance: 4Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.35W Polarisation: unipolar Gate charge: 0.44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 60V Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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MMBT7002KDW-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 300mA; Idm: 1.2A; 0.35W Case: SOT363 Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: ESD protected gate Drain current: 0.3A On-state resistance: 4Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.35W Polarisation: unipolar Gate charge: 0.44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A Drain-source voltage: 60V |
Produkt ist nicht verfügbar |