MMBT7002K-AQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.046 EUR |
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Technische Details MMBT7002K-AQ Diotec Semiconductor
Description: MOSFET N-CH 60V 300MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote MMBT7002K-AQ nach Preis ab 0.055 EUR bis 0.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MMBT7002K-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET N-CH 60V 300MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
auf Bestellung 3980 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT7002K-AQ | Hersteller : Diotec Semiconductor | Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
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MMBT7002K-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; Idm: 0.8A; 0.35W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: ESD protected gate Drain current: 0.3A On-state resistance: 4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Drain-source voltage: 60V Anzahl je Verpackung: 25 Stücke |
Produkt ist nicht verfügbar |
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MMBT7002K-AQ | Hersteller : Diotec Semiconductor | MOSFET MOSFET, SOT-23, 60V, 0.3A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
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MMBT7002K-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; Idm: 0.8A; 0.35W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: ESD protected gate Drain current: 0.3A On-state resistance: 4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Drain-source voltage: 60V |
Produkt ist nicht verfügbar |