MMBT5551W-AU_R1_007A1 Panjit
auf Bestellung 29990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 0.34 EUR |
| 10+ | 0.32 EUR |
| 100+ | 0.22 EUR |
| 1000+ | 0.099 EUR |
| 3000+ | 0.058 EUR |
| 9000+ | 0.048 EUR |
| 24000+ | 0.046 EUR |
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Technische Details MMBT5551W-AU_R1_007A1 Panjit
Description: NPN HIGH VOLTAGE TRANSISTOR,AEC-, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-323, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 200 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MMBT5551W-AU_R1_007A1 nach Preis ab 0.047 EUR bis 0.33 EUR
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| MMBT5551W-AU_R1_007A1 | Hersteller : Panjit International Inc. |
 Description: NPN HIGH VOLTAGE TRANSISTOR,AEC-Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMBT5551W-AU_R1_007A1 | Hersteller : Panjit International Inc. |
Description: NPN HIGH VOLTAGE TRANSISTOR,AEC- Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMBT5551W-AU_R1_007A1 | Hersteller : PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MMBT5551W-AU_R1_007A1 | Hersteller : PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.2W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 30...250 Mounting: SMD Application: automotive industry |
Produkt ist nicht verfügbar |