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MMBT3906FN3_R1_00001

MMBT3906FN3_R1_00001 Panjit International Inc.

MMBT3906FN3.pdf Hersteller: Panjit International Inc.
Description: PNP GENERAL PURPOSE SWITCHING TR
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
auf Bestellung 6915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
79+ 0.22 EUR
127+ 0.14 EUR
500+ 0.1 EUR
1000+ 0.09 EUR
2000+ 0.079 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 48
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Technische Details MMBT3906FN3_R1_00001 Panjit International Inc.

Description: PNP GENERAL PURPOSE SWITCHING TR, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: 3-DFN (0.6x1), Part Status: Active, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW.

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MMBT3906FN3_R1_00001 MMBT3906FN3_R1_00001 Hersteller : Panjit MMBT3906FN3-1875629.pdf Bipolar Transistors - BJT PNPGENERALPURPOSESWITCHINGTRANSISTOR VCE-40V IC-200mA DFN3L
auf Bestellung 2178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+0.38 EUR
13+ 0.23 EUR
100+ 0.1 EUR
1000+ 0.083 EUR
2500+ 0.07 EUR
8000+ 0.055 EUR
24000+ 0.053 EUR
Mindestbestellmenge: 8
MMBT3906FN3_R1_00001 MMBT3906FN3_R1_00001 Hersteller : Panjit International Inc. MMBT3906FN3.pdf Description: PNP GENERAL PURPOSE SWITCHING TR
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
MMBT3906FN3-R1-00001 MMBT3906FN3-R1-00001 Hersteller : Panjit MMBT3906FN3-1875629.pdf Bipolar Transistors - BJT DFN 3L/TRA/DFN/GPT-03FNP
Produkt ist nicht verfügbar