MJE5731
Hersteller: auf Bestellung 1556 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MJE5731
Description: TRANS PNP 350V 1A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V, Frequency - Transition: 10MHz, Supplier Device Package: TO-220, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 40 W.
Weitere Produktangebote MJE5731
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MJE5731 | Hersteller : onsemi |
Description: TRANS PNP 350V 1A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
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MJE5731 | Hersteller : onsemi |
Bipolar Transistors - BJT 1A 350V 40W PNP |
Produkt ist nicht verfügbar |