Technische Details MJD44H11TF ON Semiconductor
Description: TRANS NPN 80V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V, Frequency - Transition: 50MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.75 W.
Weitere Produktangebote MJD44H11TF
Foto | Bezeichnung | Hersteller | Beschreibung |
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MJD44H11TF | Hersteller : ON Semiconductor |
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MJD44H11TF | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
Produkt ist nicht verfügbar |
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MJD44H11TF | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
Produkt ist nicht verfügbar |
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MJD44H11TF | Hersteller : onsemi / Fairchild |
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Produkt ist nicht verfügbar |