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MJD41CQ-13

MJD41CQ-13 Diodes Incorporated

MJD41CQ-3103766.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 2326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.95 EUR
10+ 0.83 EUR
100+ 0.57 EUR
500+ 0.47 EUR
1000+ 0.41 EUR
2500+ 0.35 EUR
5000+ 0.34 EUR
Mindestbestellmenge: 3
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Technische Details MJD41CQ-13 Diodes Incorporated

Description: PWR HI VOLTAGE TRANSISTOR TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V, Frequency - Transition: 3MHz, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.5 W, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote MJD41CQ-13 nach Preis ab 0.4 EUR bis 0.95 EUR

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MJD41CQ-13 MJD41CQ-13 Hersteller : Diodes Incorporated MJD41CQ.pdf Description: PWR HI VOLTAGE TRANSISTOR TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.81 EUR
100+ 0.56 EUR
500+ 0.47 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 19
MJD41CQ-13 Hersteller : Diodes Zetex mjd41cq.pdf 100V NPN Medium Power Transistor In To252 Automotive AEC-Q101
Produkt ist nicht verfügbar
MJD41CQ-13 MJD41CQ-13 Hersteller : Diodes Incorporated MJD41CQ.pdf Description: PWR HI VOLTAGE TRANSISTOR TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar