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MII300-12A4

MII300-12A4 IXYS


MII300-12A4_MID300-12A4_MDI300-12A4-478354.pdf Hersteller: IXYS
Discrete Semiconductor Modules IGBT MODULE 1200V,300A
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Lieferzeit 10-14 Tag (e)
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Technische Details MII300-12A4 IXYS

Description: IGBT MOD 1200V 330A 1380W Y3DCB, Packaging: Box, Package / Case: Y3-DCB, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Y3-DCB, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 330 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1380 W, Current - Collector Cutoff (Max): 13 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.

Weitere Produktangebote MII300-12A4 nach Preis ab 197.1 EUR bis 260.17 EUR

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MII300-12A4 Hersteller : IXYS/Littelfuse Транзистор IGBT; Uceb, В = 1 200; Ic, А = 330; Uce(on), В = 2,2; Uge(th), В = 4,5...6,5; Тексп, °С = -40...+125; Тип монт = выводной; td(on), нс = 100; td(off), нс = 90; Y3-DCB
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+260.17 EUR
10+ 224.15 EUR
100+ 197.1 EUR
MII300-12A4 Hersteller : IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 220A
Topology: IGBT half-bridge
Technology: NPT
Case: Y3-DCB
Application: motors
Power dissipation: 1.38kW
Collector current: 220A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MII300-12A4 Hersteller : IXYS Description: IGBT MOD 1200V 330A 1380W Y3DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1380 W
Current - Collector Cutoff (Max): 13 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
MII300-12A4 Hersteller : IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 220A
Topology: IGBT half-bridge
Technology: NPT
Case: Y3-DCB
Application: motors
Power dissipation: 1.38kW
Collector current: 220A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar