MDNA280UB2200PTED IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Case: E2-Pack
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Case: E2-Pack
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Anzahl je Verpackung: 1 Stücke
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Technische Details MDNA280UB2200PTED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Case: E2-Pack, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.7kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Electrical mounting: Press-in PCB, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MDNA280UB2200PTED
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MDNA280UB2200PTED | Hersteller : IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
Produkt ist nicht verfügbar |
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MDNA280UB2200PTED | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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MDNA280UB2200PTED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Case: E2-Pack Mechanical mounting: screw Type of module: IGBT Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |