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MCP118N085Y-BP Micro Commercial Co
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Description: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 59A, 10V
Power Dissipation (Max): 200W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 40 V
auf Bestellung 4848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.68 EUR |
10+ | 2.23 EUR |
100+ | 1.77 EUR |
500+ | 1.6 EUR |
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Technische Details MCP118N085Y-BP Micro Commercial Co
Description: N-CHANNEL MOSFET,TO-220AB(H), Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 59A, 10V, Power Dissipation (Max): 200W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (H), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 85 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 40 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
MCP118N085Y-BP | Hersteller : Micro Commercial Components (MCC) |
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