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MCG40N10YHE3-TP

MCG40N10YHE3-TP Micro Commercial Co

MCG40N10YHE3(DFN3333).pdf Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.52 EUR
Mindestbestellmenge: 5000
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Technische Details MCG40N10YHE3-TP Micro Commercial Co

Description: N-CHANNEL MOSFET, DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V, Power Dissipation (Max): 43W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote MCG40N10YHE3-TP nach Preis ab 0.5 EUR bis 1.46 EUR

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MCG40N10YHE3-TP MCG40N10YHE3-TP Hersteller : Micro Commercial Co MCG40N10YHE3(DFN3333).pdf Description: N-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.44 EUR
15+ 1.25 EUR
100+ 0.87 EUR
500+ 0.72 EUR
1000+ 0.62 EUR
2000+ 0.55 EUR
Mindestbestellmenge: 13
MCG40N10YHE3-TP MCG40N10YHE3-TP Hersteller : Micro Commercial Components (MCC) MCG40N10YHE3_DFN3333_-3132367.pdf MOSFETs
auf Bestellung 4896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.46 EUR
10+ 1.28 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
2500+ 0.59 EUR
5000+ 0.5 EUR
Mindestbestellmenge: 2
MCG40N10YHE3-TP Hersteller : Micro Commercial Components MCG40N10YHE3(DFN3333).pdf MCG40N10YHE3-TP
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