MCB70N15YHE3-TP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 180W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2517 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.25 EUR |
| 1600+ | 2.11 EUR |
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Technische Details MCB70N15YHE3-TP Micro Commercial Co
Description: POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, Power Dissipation (Max): 180W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2517 pF @ 75 V, Qualification: AEC-Q101.
Weitere Produktangebote MCB70N15YHE3-TP nach Preis ab 2.15 EUR bis 6.02 EUR
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MCB70N15YHE3-TP | Hersteller : Micro Commercial Components (MCC) |
MOSFETs N-CHANNEL MOSFET,D2-PAK |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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MCB70N15YHE3-TP | Hersteller : Micro Commercial Co |
Description: POWER MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 180W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2517 pF @ 75 V Qualification: AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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