MBT35200MT2G onsemi
Hersteller: onsemi
Description: TRANS PNP 35V 2A 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
Description: TRANS PNP 35V 2A 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2049+ | 0.25 EUR |
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Technische Details MBT35200MT2G onsemi
Description: TRANS PNP 35V 2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: PNP, Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V, Frequency - Transition: 100MHz, Supplier Device Package: 6-TSOP, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 35 V, Power - Max: 625 mW.
Weitere Produktangebote MBT35200MT2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MBT35200MT2G | Hersteller : ON | 08+ SOT-163 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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MBT35200MT2G | Hersteller : onsemi |
Description: TRANS PNP 35V 2A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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MBT35200MT2G | Hersteller : ON Semiconductor |
 Bipolar Transistors - BJT TSOP6 PNP XSTR SPCL |
Produkt ist nicht verfügbar |