MBRT12030R DACO Semiconductor
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Category: Diode modules
Description: Module: diode; double,common anode; 30V; If: 60Ax2; TO240AB; screw
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Features of semiconductor devices: Schottky
Case: TO240AB
Max. off-state voltage: 30V
Max. forward voltage: 0.7V
Load current: 60A x2
Semiconductor structure: common anode; double
Max. forward impulse current: 800A
Leakage current: 2µA
Anzahl je Verpackung: 1 Stücke
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Technische Details MBRT12030R DACO Semiconductor
Description: DIODE MOD SCHOTT 30V 60A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 60A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Weitere Produktangebote MBRT12030R
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MBRT12030R | Hersteller : GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
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MBRT12030R | Hersteller : GeneSiC Semiconductor |
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Produkt ist nicht verfügbar |
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MBRT12030R | Hersteller : DACO Semiconductor |
![]() Description: Module: diode; double,common anode; 30V; If: 60Ax2; TO240AB; screw Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: Schottky Case: TO240AB Max. off-state voltage: 30V Max. forward voltage: 0.7V Load current: 60A x2 Semiconductor structure: common anode; double Max. forward impulse current: 800A Leakage current: 2µA |
Produkt ist nicht verfügbar |