MBRT120150R GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Description: DIODE MOD SCHOTT 150V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
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Technische Details MBRT120150R GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 60A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A, Current - Reverse Leakage @ Vr: 1 mA @ 150 V.
Weitere Produktangebote MBRT120150R
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
MBRT120150R | Hersteller : GeneSiC Semiconductor | Schottky Diodes & Rectifiers 150V 120A Reverse |
Produkt ist nicht verfügbar |