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MBRT120100 GeneSiC Semiconductor
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Technische Details MBRT120100 GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 100V 60A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 60A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Weitere Produktangebote MBRT120100
Foto | Bezeichnung | Hersteller | Beschreibung |
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MBRT120100 | Hersteller : DACO Semiconductor |
![]() Description: Module: diode; double,common cathode; 100V; If: 60Ax2; TO240AB Case: TO240AB Electrical mounting: screw Mechanical mounting: screw Load current: 60A x2 Max. forward voltage: 0.84V Leakage current: 2µA Features of semiconductor devices: Schottky Max. off-state voltage: 100V Type of module: diode Max. forward impulse current: 800A Semiconductor structure: common cathode; double Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MBRT120100 | Hersteller : GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
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MBRT120100 | Hersteller : GeneSiC Semiconductor |
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Produkt ist nicht verfügbar |
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MBRT120100 | Hersteller : DACO Semiconductor |
![]() Description: Module: diode; double,common cathode; 100V; If: 60Ax2; TO240AB Case: TO240AB Electrical mounting: screw Mechanical mounting: screw Load current: 60A x2 Max. forward voltage: 0.84V Leakage current: 2µA Features of semiconductor devices: Schottky Max. off-state voltage: 100V Type of module: diode Max. forward impulse current: 800A Semiconductor structure: common cathode; double |
Produkt ist nicht verfügbar |