![MBRM110ET3G MBRM110ET3G](https://www.mouser.com/images/onsemiconductor/lrg/do216.jpg)
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.83 EUR |
10+ | 0.71 EUR |
100+ | 0.53 EUR |
500+ | 0.42 EUR |
1000+ | 0.3 EUR |
2500+ | 0.29 EUR |
5000+ | 0.27 EUR |
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Technische Details MBRM110ET3G onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE, Packaging: Tape & Reel (TR), Package / Case: DO-216AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 1A, Supplier Device Package: Powermite, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 10 V, Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 10 V.
Weitere Produktangebote MBRM110ET3G
Foto | Bezeichnung | Hersteller | Beschreibung |
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MBRM110ET3G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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MBRM110ET3G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
Produkt ist nicht verfügbar |
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MBRM110ET3G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-216AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 10 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
Produkt ist nicht verfügbar |