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MBR10H200CT Taiwan Semiconductor Corporation
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Description: DIODE ARR SCHOT 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.43 EUR |
16+ | 1.17 EUR |
100+ | 0.91 EUR |
500+ | 0.77 EUR |
1000+ | 0.63 EUR |
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Technische Details MBR10H200CT Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 200V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 10A, Supplier Device Package: TO-220AB, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 970 mV @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
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MBR10H200CT | Hersteller : Taiwan Semiconductor |
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MBR10H200CT | Hersteller : Taiwan Semiconductor |
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Produkt ist nicht verfügbar |