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LSIC2SD065C08A Littelfuse


_semiconductor_sic_schottky_lsic2sd065c06a_datasheet.pdf.pdf Hersteller: Littelfuse
650V/8A SiC SBD TO252-2L AEC-Q101
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Technische Details LSIC2SD065C08A Littelfuse

Description: DIODE SIL CARB 650V 23A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 415pF @ 1V, 1MHz, Current - Average Rectified (Io): 23A, Supplier Device Package: TO-252 (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.

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LSIC2SD065C08A LSIC2SD065C08A Hersteller : LITTELFUSE LSIC2SD065C08A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO252; 38W; LSIC2SD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Power dissipation: 38W
Semiconductor structure: single diode
Case: TO252
Max. forward impulse current: 40A
Max. forward voltage: 1.85V
Manufacturer series: LSIC2SD
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
LSIC2SD065C08A LSIC2SD065C08A Hersteller : Littelfuse Inc. media?resourcetype=datasheets&itemid=32d26112-c458-4aef-b24d-e021a062cc33&filename=littelfuse_power_semiconductor_sic_schottky_lsic2sd065c08a_datasheet.pdf Description: DIODE SIL CARB 650V 23A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 415pF @ 1V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
LSIC2SD065C08A LSIC2SD065C08A Hersteller : Littelfuse Inc. media?resourcetype=datasheets&itemid=32d26112-c458-4aef-b24d-e021a062cc33&filename=littelfuse_power_semiconductor_sic_schottky_lsic2sd065c08a_datasheet.pdf Description: DIODE SIL CARB 650V 23A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 415pF @ 1V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
LSIC2SD065C08A LSIC2SD065C08A Hersteller : Littelfuse media-3319960.pdf Schottky Diodes & Rectifiers 650V 8A TO-252-2L SiC Schottky Diode
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LSIC2SD065C08A LSIC2SD065C08A Hersteller : LITTELFUSE LSIC2SD065C08A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO252; 38W; LSIC2SD
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Power dissipation: 38W
Semiconductor structure: single diode
Case: TO252
Max. forward impulse current: 40A
Max. forward voltage: 1.85V
Manufacturer series: LSIC2SD
Application: automotive industry
Produkt ist nicht verfügbar