auf Bestellung 2221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.08 EUR |
| 10+ | 11.21 EUR |
| 25+ | 10.65 EUR |
| 100+ | 9.35 EUR |
| 250+ | 9.03 EUR |
| 450+ | 8.2 EUR |
| 900+ | 7.37 EUR |
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Technische Details LSIC1MO170E0750 Littelfuse
Description: SICFET N-CH 1700V 750OHM TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V.
Weitere Produktangebote LSIC1MO170E0750 nach Preis ab 7.03 EUR bis 13.24 EUR
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LSIC1MO170E0750 | Hersteller : Littelfuse Inc. |
 Description: SICFET N-CH 1700V 750OHM TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V |
auf Bestellung 17667 Stücke: Lieferzeit 10-14 Tag (e) |
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| LSIC1MO170E0750 | Hersteller : Littelfuse |
1700 V 750 mOhm N-Channel SiC MOSFET |
Produkt ist nicht verfügbar |
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| LSIC1MO170E0750 | Hersteller : LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.4A; Idm: 11A; 60W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 60W Polarisation: unipolar Gate charge: 13nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 11A Drain-source voltage: 1.7kV Drain current: 4.4A On-state resistance: 0.75Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| LSIC1MO170E0750 | Hersteller : LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.4A; Idm: 11A; 60W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 60W Polarisation: unipolar Gate charge: 13nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 11A Drain-source voltage: 1.7kV Drain current: 4.4A On-state resistance: 0.75Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |