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LSIC1MO120E0160 Littelfuse Inc.
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Description: SICFET N-CH 1200V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 800 V
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.85 EUR |
30+ | 11.62 EUR |
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Technische Details LSIC1MO120E0160 Littelfuse Inc.
Description: SICFET N-CH 1200V 22A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 800 V.
Weitere Produktangebote LSIC1MO120E0160 nach Preis ab 14.59 EUR bis 19.69 EUR
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LSIC1MO120E0160 | Hersteller : Littelfuse |
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auf Bestellung 593 Stücke: Lieferzeit 10-14 Tag (e) |
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LSIC1MO120E0160 | Hersteller : Littelfuse |
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LSIC1MO120E0160 | Hersteller : Littelfuse |
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LSIC1MO120E0160 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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LSIC1MO120E0160 | Hersteller : LITTELFUSE |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 44A; 125W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 125W Polarisation: unipolar Gate charge: 57nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 44A Drain-source voltage: 1.2kV Drain current: 14A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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LSIC1MO120E0160 | Hersteller : LITTELFUSE |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 44A; 125W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 125W Polarisation: unipolar Gate charge: 57nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 44A Drain-source voltage: 1.2kV Drain current: 14A On-state resistance: 0.16Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |