![LND150N3-G-P013 LND150N3-G-P013](https://www.mouser.com/images/mouserelectronics/lrg/A_TO_92_3_t.jpg)
auf Bestellung 1692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.11 EUR |
25+ | 0.9 EUR |
100+ | 0.85 EUR |
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Technische Details LND150N3-G-P013 Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30mA (Tj), Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 740mW (Ta), Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V.
Weitere Produktangebote LND150N3-G-P013
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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LND150N3-G-P013 | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 30mA; Idm: 0.03A; 0.74W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30mA Pulsed drain current: 0.03A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1kΩ Mounting: THT Kind of package: Ammo Pack Kind of channel: depleted Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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LND150N3-G-P013 | Hersteller : Microchip Technology |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
Produkt ist nicht verfügbar |
|
LND150N3-G-P013 | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 30mA; Idm: 0.03A; 0.74W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30mA Pulsed drain current: 0.03A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1kΩ Mounting: THT Kind of package: Ammo Pack Kind of channel: depleted |
Produkt ist nicht verfügbar |