LN100LA-G Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 6LFGA
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Cascoded)
Operating Temperature: -25°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 3000Ohm @ 2mA, 2.8V
Vgs(th) (Max) @ Id: 1.6V @ 10µA
Supplier Device Package: 6-LFGA (3x3)
Description: MOSFET 2N-CH 1200V 6LFGA
Packaging: Tape & Reel (TR)
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Cascoded)
Operating Temperature: -25°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 3000Ohm @ 2mA, 2.8V
Vgs(th) (Max) @ Id: 1.6V @ 10µA
Supplier Device Package: 6-LFGA (3x3)
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Technische Details LN100LA-G Microchip Technology
Description: MOSFET 2N-CH 1200V 6LFGA, Packaging: Tape & Reel (TR), Package / Case: 6-VFLGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Cascoded), Operating Temperature: -25°C ~ 125°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW, Drain to Source Voltage (Vdss): 1200V (1.2kV), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 3000Ohm @ 2mA, 2.8V, Vgs(th) (Max) @ Id: 1.6V @ 10µA, Supplier Device Package: 6-LFGA (3x3).
Weitere Produktangebote LN100LA-G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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LN100LA-G | Hersteller : Microchip Technology | MOSFET 1200V Cascoded N-Channel MOSFET |
Produkt ist nicht verfügbar |