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LM5113QDPRRQ1 Texas Instruments
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Gate Drivers Automotive 1.2-A/5-A, 100-V half bridge gate driver for GaNFET 10-WSON -40 to 125
auf Bestellung 6163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.97 EUR |
10+ | 6.76 EUR |
100+ | 5.86 EUR |
250+ | 5.56 EUR |
500+ | 5 EUR |
1000+ | 4.21 EUR |
4500+ | 4.01 EUR |
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Technische Details LM5113QDPRRQ1 Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 10WSON, Packaging: Tape & Reel (TR), Package / Case: 10-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 4.5V ~ 5.5V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 100 V, Supplier Device Package: 10-WSON (4x4), Rise / Fall Time (Typ): 7ns, 3.5ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 1.2A, 5A, DigiKey Programmable: Not Verified, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote LM5113QDPRRQ1 nach Preis ab 3.9 EUR bis 9.82 EUR
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 7ns, 3.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 1.2A, 5A DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2915 Stücke: Lieferzeit 10-14 Tag (e) |
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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LM5113QDPRRQ1 | Hersteller : TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,gate driver; WSON10; -5÷1.2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: WSON10 Output current: -5...1.2A Number of channels: 2 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 7ns Pulse fall time: 3.5ns Protection: undervoltage UVP Anzahl je Verpackung: 4500 Stücke |
Produkt ist nicht verfügbar |
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LM5113QDPRRQ1 | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 7ns, 3.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 1.2A, 5A DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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LM5113QDPRRQ1 | Hersteller : TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,gate driver; WSON10; -5÷1.2A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: WSON10 Output current: -5...1.2A Number of channels: 2 Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 7ns Pulse fall time: 3.5ns Protection: undervoltage UVP |
Produkt ist nicht verfügbar |