LM5109BQNGTTQ1 Texas Instruments
Hersteller: Texas InstrumentsDescription: IC GATE DRVR HALF-BRIDGE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 14V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108 V
Supplier Device Package: 8-WSON (4x4)
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.3 EUR |
| 2000+ | 1.21 EUR |
| 5000+ | 1.16 EUR |
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Technische Details LM5109BQNGTTQ1 Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 8WSON, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 8V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 108 V, Supplier Device Package: 8-WSON (4x4), Rise / Fall Time (Typ): 15ns, 15ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.2V, Current - Peak Output (Source, Sink): 1A, 1A, Grade: Automotive, Part Status: Active, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Weitere Produktangebote LM5109BQNGTTQ1 nach Preis ab 1.2 EUR bis 2.64 EUR
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LM5109BQNGTTQ1 | Hersteller : Texas Instruments |
Gate Drivers High Volt 1A Peak Half Bridge |
auf Bestellung 1389 Stücke: Lieferzeit 10-14 Tag (e) |
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LM5109BQNGTTQ1 | Hersteller : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 108 V Supplier Device Package: 8-WSON (4x4) Rise / Fall Time (Typ): 15ns, 15ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 1A, 1A Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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LM5109BQNGTTQ1 | Hersteller : Texas Instruments |
Driver 1A 2-OUT High and Low Side Half Brdg Non-Inv Automotive AEC-Q100 8-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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LM5109BQNGTTQ1 | Hersteller : Texas Instruments |
Driver 1A 2-OUT High and Low Side Half Brdg Non-Inv Automotive AEC-Q100 8-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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LM5109BQNGTTQ1 | Hersteller : Texas Instruments |
Driver 1A 2-OUT High and Low Side Half Brdg Non-Inv Automotive AEC-Q100 8-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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LM5109BQNGTTQ1 | Hersteller : Texas Instruments |
Driver 1A 2-OUT High and Low Side Half Brdg Non-Inv Automotive 8-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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LM5109BQNGTTQ1 | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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LM5109BQNGTTQ1 | Hersteller : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; WSON8; -1÷1A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: WSON8 Output current: -1...1A Number of channels: 2 Supply voltage: 8...14V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 15ns Pulse fall time: 15ns Protection: undervoltage UVP |
Produkt ist nicht verfügbar |