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LGB8207TH LITTELFUSE


LGB8207TH.pdf Hersteller: LITTELFUSE
Category: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; ignition systems
Mounting: SMD
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Case: D2PAK
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 165W
Anzahl je Verpackung: 1 Stücke
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Technische Details LGB8207TH LITTELFUSE

Category: SMD IGBT transistors, Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; ignition systems, Mounting: SMD, Application: ignition systems, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate; logic level, Case: D2PAK, Collector-emitter voltage: 365V, Gate-emitter voltage: ±15V, Collector current: 20A, Pulsed collector current: 50A, Type of transistor: IGBT, Power dissipation: 165W, Anzahl je Verpackung: 1 Stücke.

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LGB8207TH Hersteller : Littelfuse Inc. Description: IGBT 365V 20A 165W D2PAK3
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LGB8207TH Hersteller : LITTELFUSE LGB8207TH.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 365V; 20A; 165W; D2PAK; ignition systems
Mounting: SMD
Application: ignition systems
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Case: D2PAK
Collector-emitter voltage: 365V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 165W
Produkt ist nicht verfügbar