KSE45H8TU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: TRANS PNP 60V 10A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.67 W
Description: TRANS PNP 60V 10A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.67 W
auf Bestellung 22916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1110+ | 0.44 EUR |
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Produktbewertung abgeben
Technische Details KSE45H8TU Fairchild Semiconductor
Description: TRANS PNP 60V 10A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V, Frequency - Transition: 40MHz, Supplier Device Package: TO-220-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.67 W.
Weitere Produktangebote KSE45H8TU nach Preis ab 0.41 EUR bis 1.15 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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KSE45H8TU | Hersteller : onsemi / Fairchild | Bipolar Transistors - BJT PNP Epitaxial Sil |
auf Bestellung 174 Stücke: Lieferzeit 10-14 Tag (e) |
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KSE45H8TU | Hersteller : ONSEMI |
Description: ONSEMI - KSE45H8TU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 22916 Stücke: Lieferzeit 14-21 Tag (e) |
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KSE45H8TU | Hersteller : ON Semiconductor | Trans GP BJT PNP 60V 10A 1670mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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KSE45H8TU | Hersteller : onsemi |
Description: TRANS PNP 60V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Frequency - Transition: 40MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.67 W |
Produkt ist nicht verfügbar |
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KSE45H8TU | Hersteller : Diodes Incorporated | Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |