![KBP207G C2 KBP207G C2](https://download.siliconexpert.com/pdfs/2009/7/8/5/21/41/547/tsc_/manual/4pin_ kbp.jpg)
KBP207G C2 Taiwan Semiconductor
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details KBP207G C2 Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 2A KBP, Packaging: Tube, Package / Case: 4-SIP, KBP, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBP, Part Status: Obsolete, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 2 A, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote KBP207G C2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
KBP207G C2 | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Part Status: Obsolete Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |