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KBP105G C2 Taiwan Semiconductor
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Technische Details KBP105G C2 Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 600V 1A KBP, Packaging: Tube, Package / Case: 4-SIP, KBP, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBP, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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KBP105G C2 | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, KBP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: KBP Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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