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Jantxv2N2945AUB/TR Microchip Technology
Hersteller: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: UB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/382
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: UB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/382
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Technische Details Jantxv2N2945AUB/TR Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV, Supplier Device Package: UB, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 400 mW, Grade: Military, Qualification: MIL-PRF-19500/382.
Weitere Produktangebote Jantxv2N2945AUB/TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
Jantxv2N2945AUB/TR | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |