Technische Details JANTXV2N2905A ON Semiconductor
Description: TRANS PNP 60V 0.6A TO39, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW, Qualification: MIL-PRF-19500/290.
Weitere Produktangebote JANTXV2N2905A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JANTXV2N2905A | Hersteller : Microchip Technology |
 Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39 Bag |
Produkt ist nicht verfügbar |
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| JANTXV2N2905A | Hersteller : MICROSEMI |
TO-39PNP TRANSISTOR Anzahl je Verpackung: 1 Stücke |
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JANTXV2N2905A | Hersteller : Microchip Technology |
Description: TRANS PNP 60V 0.6A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
Produkt ist nicht verfügbar |
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JANTXV2N2905A | Hersteller : Microchip / Microsemi |
Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |