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Jantxv2N2222AUA Microchip / Microsemi


lds_0022_2N3439_40-1593857.pdf Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 50 V Small-Signal BJT
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1+54.42 EUR
100+ 52.48 EUR
250+ 50.55 EUR
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Technische Details Jantxv2N2222AUA Microchip / Microsemi

Description: TRANS NPN 50V 0.8A 4SMD, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: 4-SMD, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 650 mW, Qualification: MIL-PRF-19500/255.

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JANTXV2N2222AUA JANTXV2N2222AUA Hersteller : Microchip Technology lds-0060.pdf Trans GP BJT NPN 50V 0.8A 500mW 4-Pin UA Waffle
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Jantxv2N2222AUA Jantxv2N2222AUA Hersteller : Microchip Technology Description: TRANS NPN 50V 0.8A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar