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JANTXV1N5190 Microchip Technology
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Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/297
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Technische Details JANTXV1N5190 Microchip Technology
Description: DIODE GEN PURP 600V 3A AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 2 µA @ 600 V, Grade: Military, Qualification: MIL-PRF-19500/297.
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JANTXV1N5190 | Hersteller : Microchip / Microsemi |
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