JANTXV1N4150-1 Microchip / Microsemi
Hersteller: Microchip / MicrosemiDiodes - General Purpose, Power, Switching 75 V Signal or Computer Diode
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.26 EUR |
| 100+ | 4.03 EUR |
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Technische Details JANTXV1N4150-1 Microchip / Microsemi
Description: DIODE GEN PURP 50V 200MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Qualification: MIL-PRF-19500/231.
Weitere Produktangebote JANTXV1N4150-1
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JANTXV1N4150-1 | Hersteller : Microchip Technology |
Rectifier Diode Switching 50V 4ns 2-Pin DO-35 Bag |
Produkt ist nicht verfügbar |
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JANTXV1N4150-1 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: MIL-PRF-19500/231 |
Produkt ist nicht verfügbar |